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Device technologist – gan transistors & lnoi photonics

Palenciana
DAS Photonics
Publicada el Publicado hace 23 hr horas
Descripción

About the roleDAS Photonics is building a new microfabrication facility for LNOI photonic devices and GaN-based power transistors, including hybrid integration using Micro Transfer Printing (µTP). We are hiring Device Engineers / Technologists to lead the design and development of next-generation transistors and integrated photonic components.In this position, you will define device architecture, support process flow development, and collaborate closely with process engineers and integration teams to enable in-house fabrication and product evolution.Key ResponsibilitiesDesign and develop advanced GaN transistor architectures and/or LNOI photonic components (e.G., modulators, switches).Translate performance and application requirements into device specifications and layout.Support the definition of process flows aligned with cleanroom capabilities and equipment.Use simulation tools (TCAD, Lumerical, COMSOL…) to guide design iterations and validate performance.Collaborate with fabrication and integration teams during prototyping and characterization.Evaluate design impact on packaging, test and reliability constraints.Generate documentation, design files and IP contributions.Provide technical leadership in design reviews and roadmap planning.Contribute to future technology and device strategy within DAS Photonics.Qualifications amp; SkillsDegree (preferably PhD) in Electrical Engineering, Photonics, Physics, or related.Experience in design and development of GaN power transistors and/or LNOI photonic devices.Knowledge of semiconductor physics, material properties, and process–design interactions.Experience with simulation tools (e.G., Silvaco, Sentaurus, Lumerical, COMSOL).Ability to interface with process and packaging teams in a collaborative development environment.Familiarity with cleanroom environments and device fabrication constraints.Strong documentation and communication skills (English required, Spanish is a plus).DesirableExperience with GaN HEMT, e-mode transistors or similar technologies.Background in LNOI photonic modulators or III-V photonic integration.Familiarity with hybrid integration techniques (e.G., µTP or wafer bonding).Prior participation in prototyping cycles or cleanroom transfer-to-fab projects.

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